Signatures of Gate-Driven Out-of-Equilibrium Superconductivity in Ta/InAs Nanowires
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Signatures of Gate-Driven Out-of-Equilibrium Superconductivity in Ta/InAs Nanowires. / Elalaily, Tosson; Berke, Martin; Kedves, Máté; Fülöp, Gergő; Scherübl, Zoltán; Kanne, Thomas; Nygård, Jesper; Makk, Péter; Csonka, Szabolcs.
I: ACS Nano, Bind 17, Nr. 6, 28.03.2023, s. 5528-5535.Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › fagfællebedømt
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TY - JOUR
T1 - Signatures of Gate-Driven Out-of-Equilibrium Superconductivity in Ta/InAs Nanowires
AU - Elalaily, Tosson
AU - Berke, Martin
AU - Kedves, Máté
AU - Fülöp, Gergő
AU - Scherübl, Zoltán
AU - Kanne, Thomas
AU - Nygård, Jesper
AU - Makk, Péter
AU - Csonka, Szabolcs
N1 - Publisher Copyright: © 2023 The Authors. Published by American Chemical Society.
PY - 2023/3/28
Y1 - 2023/3/28
N2 - Understanding the microscopic origin of the gate-controlled supercurrent (GCS) in superconducting nanobridges is crucial for engineering superconducting switches suitable for a variety of electronic applications. The origin of GCS is controversial, and various mechanisms have been proposed to explain it. In this work, we have investigated the GCS in a Ta layer deposited on the surface of InAs nanowires. Comparison between switching current distributions at opposite gate polarities and between the gate dependence of two opposite side gates with different nanowire-gate spacings shows that the GCS is determined by the power dissipated by the gate leakage. We also found a substantial difference between the influence of the gate and elevated bath temperature on the magnetic field dependence of the supercurrent. Detailed analysis of the switching dynamics at high gate voltages shows that the device is driven into the multiple phase slips regime by high-energy fluctuations arising from the leakage current.
AB - Understanding the microscopic origin of the gate-controlled supercurrent (GCS) in superconducting nanobridges is crucial for engineering superconducting switches suitable for a variety of electronic applications. The origin of GCS is controversial, and various mechanisms have been proposed to explain it. In this work, we have investigated the GCS in a Ta layer deposited on the surface of InAs nanowires. Comparison between switching current distributions at opposite gate polarities and between the gate dependence of two opposite side gates with different nanowire-gate spacings shows that the GCS is determined by the power dissipated by the gate leakage. We also found a substantial difference between the influence of the gate and elevated bath temperature on the magnetic field dependence of the supercurrent. Detailed analysis of the switching dynamics at high gate voltages shows that the device is driven into the multiple phase slips regime by high-energy fluctuations arising from the leakage current.
KW - field effect
KW - gate-controlled supercurrent
KW - hot electron injection
KW - nanowire
KW - phase slips
KW - phonons
U2 - 10.1021/acsnano.2c10877
DO - 10.1021/acsnano.2c10877
M3 - Journal article
C2 - 36912466
AN - SCOPUS:85149762201
VL - 17
SP - 5528
EP - 5535
JO - A C S Nano
JF - A C S Nano
SN - 1936-0851
IS - 6
ER -
ID: 342928009