Field dependence of relaxation rates in 3He-plus-substrate systems

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Standard

Field dependence of relaxation rates in 3He-plus-substrate systems. / Geng, Q; Olsen, Malte; Rasmussen, Finn Berg.

I: Japanese Journal of Applied Physics, Bind 26, Nr. 3, Part 1, 01.01.1987, s. 329-330.

Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › fagfællebedømt

Harvard

Geng, Q, Olsen, M & Rasmussen, FB 1987, 'Field dependence of relaxation rates in 3He-plus-substrate systems', Japanese Journal of Applied Physics, bind 26, nr. 3, Part 1, s. 329-330. https://doi.org/10.7567/JJAPS.26S3.329

APA

Geng, Q., Olsen, M., & Rasmussen, F. B. (1987). Field dependence of relaxation rates in 3He-plus-substrate systems. Japanese Journal of Applied Physics, 26(3, Part 1), 329-330. https://doi.org/10.7567/JJAPS.26S3.329

Vancouver

Geng Q, Olsen M, Rasmussen FB. Field dependence of relaxation rates in 3He-plus-substrate systems. Japanese Journal of Applied Physics. 1987 jan. 1;26(3, Part 1):329-330. https://doi.org/10.7567/JJAPS.26S3.329

Author

Geng, Q ; Olsen, Malte ; Rasmussen, Finn Berg. / Field dependence of relaxation rates in 3He-plus-substrate systems. I: Japanese Journal of Applied Physics. 1987 ; Bind 26, Nr. 3, Part 1. s. 329-330.

Bibtex

@article{46af8cfd45604252bb281d4136888ff6,
title = "Field dependence of relaxation rates in 3He-plus-substrate systems",
keywords = "Faculty of Science, Helium-3, NMR",
author = "Q Geng and Malte Olsen and Rasmussen, {Finn Berg}",
year = "1987",
month = jan,
day = "1",
doi = "10.7567/JJAPS.26S3.329",
language = "English",
volume = "26",
pages = "329--330",
journal = "Japanese Journal of Applied Physics",
publisher = "Institute of Physics Publishing Ltd",
number = "3, Part 1",

}

RIS

TY - JOUR

T1 - Field dependence of relaxation rates in 3He-plus-substrate systems

AU - Geng, Q

AU - Olsen, Malte

AU - Rasmussen, Finn Berg

PY - 1987/1/1

Y1 - 1987/1/1

KW - Faculty of Science

KW - Helium-3

KW - NMR

U2 - 10.7567/JJAPS.26S3.329

DO - 10.7567/JJAPS.26S3.329

M3 - Journal article

VL - 26

SP - 329

EP - 330

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 3, Part 1

ER -

ID: 128333193